intrinsic carrier concentration
英 [ɪnˈtrɪnzɪk ˈkæriə(r) ˌkɒnsnˈtreɪʃn]
美 [ɪnˈtrɪnzɪk ˈkæriər ˌkɑːnsnˈtreɪʃn]
网络 本征载流子浓度; 本质载子浓度
双语例句
- Low temperature model of the bandgap and the intrinsic carrier concentration in silicon
低温区硅的禁带宽度和本征载流子浓度与温度的关系 - Intrinsic carrier concentration in hg_ ( 1-x) cd_xte semiconductors with nonparabolic band
非抛物型能带半导体Hg（1-x）CdxTe的本征载流子浓度 - A accurate expression for the bandgap and a simple formula for the intrinsic carrier concentration at low temperature are presented.
本文提出了低温区高精度的禁带宽度的表达式，获得了低温区本征载流子浓度的简明公式。 - The relation between the intrinsic carrier concentration and the temperature and doping concentration in the heavily doped silicon is obtained, under the consideration of the narrowing effect of the bandgap at the heavy doping level.
考虑到禁带变窄效应的作用，本文导出了重掺杂硅中本征载流子浓度与温度和杂质浓度的关系式。 - In this paper, the high temperature models and calculation results of silicon materials 'intrinsic carrier concentration m, energy gap Eg, effective mass of electron and hole as well as carrier mobility p are introduced.
介绍了硅材料本征载流子浓度ni、禁带宽度Eg、电子和空穴有效质量和及载流子迁移率μ的高温模型和计算结果。 - Temperatures characteristics of intrinsic carrier concentration, effective densities of states in strained si_ ( 1-x) ge_x layers
应变Si（1－x）Gex层本征载流子浓度和有效态密度的温度特性分析 - But the various properties of intrinsic ZnO, such as conductivity, carrier concentration and photoluminescence and so on, cannot achieve level of devices development as it present weaker n-type conductivity. In general, this problem is solved by doped some specific elements with a certain concentration.
然而，由于本征ZnO呈弱n型导电，其电导率、载流子浓度及光致发光等各项性能还不能达到器件开发水平，因此常常通过掺杂一定浓度的特定元素来提高相应的性能。